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APTGF75DH120TG
Asymmetrical - Bridge NPT IGBT Power Module
VBUS VBUS SENSE Q1 G1 CR3
VCES = 1200V IC = 75A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 1200 100 75 150 20 500 150A @ 1200V Unit V
APTGF75DH120TG - Rev 1 July, 2006
E1 OUT1 O UT2 Q4 G4 CR2 E4
0/VBUS SENSE
NTC1
0/VBUS
NT C2
VBUS SENSE
G4 E4
OUT2
VBUS
0/VBUS
OUT1
E1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
A V W
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF75DH120TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE, IC = 2.5 mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6.5 500 Unit A V V nA
3.2 3.9 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 7.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 7.5 VGE = 15V Tj = 125C VBus = 600V IC = 75A Tj = 125C R G = 7.5 Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 100A IF = 200A IF = 100A IF = 100A VR = 800V di/dt =200A/s
Min
Typ 5.1 0.7 0.4 120 50 310 20 130 60 360 30 9
Max
Unit nF
ns
ns
mJ 4
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
100 2.0 2.3 1.8 420 580 1.2 5.3 2.5
V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Qrr
Reverse Recovery Charge
C
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APTGF75DH120TG - Rev 1 July, 2006
trr
Reverse Recovery Time
ns
APTGF75DH120TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.25 0.6 150 125 100 4.7 160
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M5
2500 -40 -40 -40 2.5
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGF75DH120TG - Rev 1 July, 2006
APTGF75DH120TG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 150 125 100 IC (A)
VGE=12V TJ = 125C VGE =20V VGE =15V
150 125 100
IC (A)
TJ=25C
75 50 25 0 0 1 2 3 V CE (V) 4 5 6
T J=125C
75 50 25 0 0 1 2 3 4 VCE (V) 5 6
VGE =9V
150 125 100
Transfert Characteristics 28 24 20 E (mJ)
TJ=125C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 7.5 TJ = 125C
Eon
IC (A)
75 50 25 0 5 6 7
16 12 8
T J=25C
4 0 0 25 50 75 IC (A) 100
Eoff
8
9
10
11
12
125
150
VGE (V) Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 70
Eoff VCE = 600V VGE =15V IC = 75A T J = 125C
Reverse Bias Safe Operating Area 175 150
Eon
125 IC (A) 100 75 50 25 0 0 300 600 900 1200 1500 VCE (V)
VGE=15V T J=125C RG=7.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0.9
IGBT
0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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APTGF75DH120TG - Rev 1 July, 2006
0.7
APTGF75DH120TG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 0
ZCS hard switching
Forward Characteristic of diode 250
ZVS
IF (A)
VCE=600V D=50% RG=7.5 TJ =125C TC=75C
200 150 100 50 0
T J=25C
T J=125C
20
40 60 IC (A)
80
100
0
0.5
1
1.5 VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7
Diode
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF75DH120TG - Rev 1 July, 2006

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